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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9859490 B1

PDFFull Text
Date of Patent:
Jan. 02, 2018

Filed:

Oct. 20, 2015

Electronic device including a semiconductor memory having multi-layered structural free layer

Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventor:

Jeong-Myeong Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:

Perkins Coie LLP

Primary Examiner:

Huan Hoang

Assistant Examiner:

Roberto Mancera, Jr

Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); G06F 3/06 (2006.01); G06F 12/0802 (2016.01); G06F 13/40 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G06F 3/0604 (2013.01); G06F 3/0629 (2013.01); G06F 3/0688 (2013.01); G06F 12/0802 (2013.01); G06F 13/4068 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); G06F 2212/60 (2013.01);
Abstract

This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Find Patent Forward Citations

Kim, Jeong-Myeong. (2018). Electronic device including a semiconductor memory having multi-layered structural free layer (U.S. Patent No. 9859490). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9859490

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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