The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Jul. 07, 2015
Applicant:
Raytheon Company, Waltham, MA (US);
Inventor:
Siddhartha Ghosh, Woodland Hills, CA (US);
Assignee:
RAYTHEON COMPANY, Waltham, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); G06F 17/5022 (2013.01); H01L 31/0304 (2013.01); H01L 31/03046 (2013.01); H01L 31/035236 (2013.01); G06F 2217/02 (2013.01);
Abstract
In one aspect, an avalanche photodiode, includes an absorber, a first superlattice structure directly connected to the absorber and configured to multiply holes and a second superlattice structure directly connected to the first superlattice structure and configured to multiply electrons. The first and second superlattice structures include III-V semiconductor material. The avalanche photodiode is a dual mode device configured to operate in either a linear mode or a Geiger mode. In another aspect, a method includes fabricating the avalanche diode.