The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Aug. 16, 2016
Applicant:
Ashok Chaudhari, Briarcliff Manor, NY (US);
Inventor:
Ashok Chaudhari, Briarcliff Manor, NY (US);
Assignee:
SOLAR-TECTIC, LLC, Briarcliff Manor, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/02 (2006.01); H01L 31/07 (2012.01); H01L 31/032 (2006.01); H01L 31/0236 (2006.01); H01L 31/0725 (2012.01); H01L 31/0392 (2006.01); H01L 31/0749 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0322 (2013.01); H01L 31/02363 (2013.01); H01L 31/03923 (2013.01); H01L 31/0725 (2013.01); H01L 31/0749 (2013.01); Y02E 10/541 (2013.01);
Abstract
A method of making a CIGS/inorganic thin film tandem semiconductor device including the steps of depositing a textured buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being selected from a group of CIGS elements, and adding the remaining CIGS elements to the metal, thereby growing a CIGS film on the inorganic film for the tandem semiconductor device.