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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9859441 B1

PDFFull Text
Date of Patent:
Jan. 02, 2018

Filed:

Aug. 05, 2016

Semiconductor device and method for manufacturing the same

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Hidekazu Miyairi, Isehara, JP;

Kengo Akimoto, Atsugi, JP;

Kojiro Shiraishi, Isehara, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office

Eric J. Robinson

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 27/01 (2006.01); H01L 27/15 (2006.01); H01L 27/32 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/016 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1255 (2013.01); H01L 27/15 (2013.01); H01L 27/3225 (2013.01); H01L 27/3241 (2013.01); H01L 27/3248 (2013.01); H01L 27/3258 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66742 (2013.01); H01L 29/786 (2013.01); H01L 29/78618 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01);
Abstract

In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

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