The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2018

Filed:

Aug. 21, 2015
Applicant:

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Hsin-Hua Lin, New Taipei, TW;

Yi-Chun Kao, New Taipei, TW;

Chih-Lung Lee, New Taipei, TW;

Po-Li Shih, New Taipei, TW;

Kuo-Lung Fang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/441 (2006.01); H01L 21/027 (2006.01); H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 21/4763 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/0274 (2013.01); H01L 21/32139 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/78642 (2013.01);
Abstract

A thin film transistor can include a substrate, a gate electrode on the substrate, a first electrode located on the substrate and surrounded by the gate electrode, a second electrode located on the first electrode and surrounded by the gate electrode, and a channel layer located between the first electrode and the second electrode. The gate electrode can include a first margin metal layer on the substrate and a second metal layer located on the first margin metal layer. A method for manufacturing the thin film transistor is also provided.


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