The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Jun. 16, 2016
Applicant:
Abb Schweiz Ag, Baden, CH;
Inventors:
Marina Antoniou, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Iulian Nistor, Niederweningen, CH;
Munaf Rahimo, Uezwil, CH;
Chiara Corvasce, Bergdietikon, CH;
Assignee:
ABB Schweiz AG, Baden, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/0661 (2013.01); H01L 29/0696 (2013.01); H01L 29/404 (2013.01); H01L 29/66333 (2013.01); H01L 29/66348 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract
A termination region of an IGBT is described, in which surface p-rings are combined with oxide/polysilicon-filled trenches, buried p-rings and surface field plates, so as to obtain an improved distribution of potential field lines in the termination region. The combination of surface ring termination and deep ring termination offers a significant reduction in the amount silicon area which is required for the termination region.