The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2018

Filed:

Dec. 19, 2016
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Katsunori Hirota, Yamato, JP;

Satoshi Ogawa, Oume, JP;

Nobutaka Ukigaya, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14689 (2013.01); H01L 27/14614 (2013.01); H01L 27/14643 (2013.01); H01L 27/14692 (2013.01);
Abstract

There is provided an imaging device manufacturing method contributing to improved reliability and yield. The method includes forming a first insulating film on a polysilicon film and then removing a portion of the first insulating film formed on a second main surface and a portion of the first insulating film formed on a side surface of the substrate to expose a polysilicon film. After the polysilicon film is exposed, a second insulating film is formed on the first main surface by a plasma chemical vapor deposition (CVD) method.


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