The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2018

Filed:

Jun. 01, 2015
Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventor:

Atsushi Tomyo, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 27/146 (2006.01); H04N 5/374 (2011.01); H04N 5/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); H01L 27/14625 (2013.01); H01L 27/14636 (2013.01); H01L 27/14649 (2013.01); H01L 27/14689 (2013.01); H01L 27/14692 (2013.01); H04N 5/32 (2013.01); H04N 5/374 (2013.01);
Abstract

The present invention has an object of improving the operation stability of a semiconductor device that detects radiations without decreasing the yield thereof. A semiconductor device includes an active matrix substrate () including a plurality of TFTs () and a plurality of pixel electrode (); a photoelectric conversion substrate () located to face the active matrix substrate (); an upper electrode () provided on a surface of the photoelectric conversion substrate () opposite to the active matrix substrate (); and a plurality of connection electrodes () provided between the active matrix substrate () and the photoelectric conversion substrate(), the plurality of connection electrodes () being formed of metal material. Each of the plurality of connection electrodes () is in direct contact with any of the plurality of pixel electrodes () and with the photoelectric conversion substrate (), overlaps a semiconductor layer () of any of the plurality of TFTs () as seen in a direction normal to the active matrix substrate (), and contains a metal element having an atomic number of 42 or greater and 82 or smaller.


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