The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Feb. 08, 2017
Omnivision Technologies, Inc., Santa Clara, CA (US);
Rui Wang, San Jose, CA (US);
Hiroaki Ebihara, Santa Clara, CA (US);
Zheng Yang, San Jose, CA (US);
Chun-Ming Tang, San Jose, CA (US);
Chao-Fang Tsai, Nantou, TW;
Tiejun Dai, Santa Clara, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
An image sensor includes a photodiode disposed in a first semiconductor material, and the photodiode is positioned to absorb image light through the backside of the first semiconductor material. A first floating diffusion is disposed proximate to the photodiode and coupled to receive image charge from the photodiode in response to a transfer signal applied to a transfer gate disposed between the photodiode and the first floating diffusion. A second semiconductor material, including a second floating diffusion, is disposed proximate to the frontside of the first semiconductor material. A dielectric material is disposed between the first semiconductor material and the second semiconductor material, and includes a first bonding via extending from the first floating diffusion to the second floating diffusion, a second bonding via disposed laterally proximate to the first bonding via, and a third bonding via disposed laterally proximate to the first bonding via.