The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2018

Filed:

Apr. 15, 2016
Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-Do, KR;

Inventors:

Yung Bin Chung, Seoul, KR;

Bo Geon Jeon, Gimcheon-si, KR;

Eun Jeong Cho, Busan, KR;

Tae Young Ahn, Suwon-si, KR;

Woo Seok Jeon, Seoul, KR;

Sung Hoon Yang, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 27/12 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 29/423 (2006.01); H01L 21/3213 (2006.01); H01L 21/465 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); G02F 1/1368 (2013.01); G02F 1/136286 (2013.01); H01L 21/30604 (2013.01); H01L 21/32133 (2013.01); H01L 21/465 (2013.01); H01L 21/47635 (2013.01); H01L 27/1262 (2013.01); H01L 29/42356 (2013.01); H01L 29/45 (2013.01); H01L 29/78606 (2013.01); G02F 2001/136295 (2013.01);
Abstract

Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.


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