The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2018

Filed:

Aug. 20, 2014
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Shuang Sun, Beijing, CN;

Fangzhen Zhang, Beijing, CN;

Jing Niu, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 27/12 (2006.01); G02F 1/1339 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01); H01L 21/4763 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); G02F 1/1339 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/134336 (2013.01); G02F 1/136286 (2013.01); H01L 21/0273 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); H01L 21/47635 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1288 (2013.01); H01L 29/6675 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78663 (2013.01); H01L 29/78672 (2013.01); G02F 2001/13685 (2013.01); G02F 2001/134372 (2013.01); G02F 2001/136231 (2013.01);
Abstract

The present invention provides an array substrate and a manufacturing method thereof and a display device. The manufacturing method comprises: forming a pattern including a pixel electrode and a source of a thin film transistor on a base substrate through a single patterning process, the pixel electrode is provided in a layer under a layer in which the source is located; forming a pattern including a drain, an active layer, a gate insulation layer and a gate of the thin film transistor through a single patterning process, the active layer covers the source and the drain, and is separated from the gate through the gate insulation layer; and forming a pattern including a passivation layer, a common electrode and a gate line through a single patterning process, the common electrode is a slit electrode and separated from the active layer and the pixel electrode through the passivation layer.


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