The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Feb. 11, 2016
Applicant:
Microsemi Soc Corporation, San Jose, CA (US);
Inventors:
Fethi Dhaoui, Mountain House, CA (US);
John McCollum, Orem, UT (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/11521 (2017.01); H01L 27/24 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/167 (2006.01); H01L 29/78 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); G11C 16/0441 (2013.01); G11C 16/3418 (2013.01); H01L 21/26513 (2013.01); H01L 21/28035 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 21/823814 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 23/528 (2013.01); H01L 27/092 (2013.01); H01L 27/0928 (2013.01); H01L 27/2436 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/167 (2013.01); H01L 29/66575 (2013.01); H01L 29/7833 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A non-volatile memory cell includes a p-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel and an n-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel. In at least one of the p-channel non-volatile transistor and the n-channel non-volatile transistor, a lightly-doped drain region extends from the drain into the channel.