The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
May. 13, 2016
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
David T. Petzold, Chelmsford, MA (US);
David Scott Whitefield, Andover, MA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/336 (2006.01); H01L 21/50 (2006.01); G01N 27/414 (2006.01); H01L 23/00 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 23/66 (2006.01); H03H 9/24 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H04B 1/40 (2015.01); H01L 21/306 (2006.01); H01L 23/535 (2006.01); H01L 29/786 (2006.01); H04B 1/44 (2006.01); H01L 21/683 (2006.01); H01L 25/16 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/30604 (2013.01); H01L 21/6835 (2013.01); H01L 21/764 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 21/76898 (2013.01); H01L 21/84 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H01L 23/66 (2013.01); H01L 27/1203 (2013.01); H01L 28/10 (2013.01); H01L 29/0649 (2013.01); H01L 29/66772 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01); H03H 9/24 (2013.01); H04B 1/40 (2013.01); H04B 1/44 (2013.01); H01L 23/3121 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/16 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/94 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15313 (2013.01);
Abstract
Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.