The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2018

Filed:

Jun. 19, 2015
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Stanley Seungchul Song, San Diego, CA (US);

Choh Fei Yeap, San Diego, CA (US);

Da Yang, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 23/48 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 23/5226 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01);
Abstract

In a particular aspect, an integrated circuit includes a first transistor including a first source region and a first drain region. The integrated circuit includes a second transistor including a second source region and a second drain region. The integrated circuit includes a first gate structure coupled to the first transistor and to the second transistor. The first gate structure is included in a first layer. The integrated circuit further includes a first metal line coupled to the first source region and to the second drain region. The first metal line has a two-dimensional routing arrangement and is included in a second layer that is distinct from the first layer.


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