The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2018

Filed:

Mar. 07, 2013
Applicant:

Max-planck-gesellschaft Zur Foerderung Der Wissenschaften E.v., Munich, DE;

Inventors:

Gisela Schuetz, Wurmberg, DE;

Corinne Grevent, Ostfildern, DE;

Kahraman Keskinbora, Stuttgart, DE;

Michael Hirscher, Stuttgart, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21K 1/06 (2006.01); G02B 5/18 (2006.01);
U.S. Cl.
CPC ...
G21K 1/067 (2013.01); G02B 5/1857 (2013.01); G02B 5/1876 (2013.01); G21K 1/06 (2013.01); G21K 1/062 (2013.01); G21K 2201/067 (2013.01); Y10T 29/49982 (2015.01);
Abstract

The invention concerns to a method of producing a Fresnel Zone Plate () for applications in high energy radiation including the following steps: supply of a substrate () transparent for high energy radiation, deposition of a layer () of a metal, a metal alloy or a metal compound on a planar surface () of the substrate (), calculating a three dimensional geometrical profile () with a mathematical model, setting up a dosage profile () for an ion beam of the ion beam lithography inverse to the calculated three dimensional geometrical profile () and milling a three dimensional geometrical profile () with concentric zones into the layer () with ion beam lithography by means of focused ion beam.


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