The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
May. 23, 2016
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Jong-Sam Kim, Gyeonggi-do, KR;
Jae-Il Kim, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); G11C 29/00 (2006.01); G06F 11/16 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01);
U.S. Cl.
CPC ...
G11C 29/787 (2013.01); G06F 11/167 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01);
Abstract
A nonvolatile memory circuit may include: a cell array including a first region comprising a plurality of first cell groups and a second region comprising a plurality of second cell groups, each of the first and second cell groups having one or more nonvolatile memory cells; and a control unit suitable for controlling the cell array to sequentially output repair addresses of the plurality of cells groups included in a region which is not over used among the first and second regions when one of the first and second regions is over used.