The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Feb. 26, 2017
Toshiba Memory Corporation, Tokyo, JP;
Hayato Konno, Yokohama Kanagawa, JP;
Yoshikazu Harada, Kawasaki Kanagawa, JP;
Kosuke Yanagidaira, Fujisawa Kanagawa, JP;
Jiyun Nakai, Yokohama Kanagawa, JP;
Hiroe Kami, Fujisawa Kanagawa, JP;
Yuko Utsunomiya, Yokohama Kanagawa, JP;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
A semiconductor memory device includes first and second memory cells, first and second word lines that are respectively connected to gates of the first and second memory cells, and a control circuit that executes first and second read operations in response to first and second command sets, respectively. The first read operation includes a first read sequence, in which the control circuit reads data by applying first to third voltages to the first word line, and a second read sequence, in which the control circuit reads data by applying a first read voltage that is set based on the result of the first read sequence, to the first word line. In the second read operation, the control circuit reads data by applying a second read voltage that is set based on the result of the first read sequence of the first read operation, to the second word line.