Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same

Abstract

This invention concerns chemically-sensitive field effect transistors (FETs) are preferably fabricated using semiconductor fabrication methods on a semiconductor wafer, and in preferred embodiments, on top of an integrated circuit structure made using semiconductor fabrication methods. The instant chemically-sensitive FETs typically comprise a conductive source, a conductive drain, and a channel composed of a one-dimensional (1D) or two-dimensional (2D) transistor material, which channel extends from the source to the drain and is fabricated using semiconductor fabrication techniques on top of a wafer. Such chemically-sensitive FETs, preferably configured in independently addressable arrays, may be employed to detect a presence and/or concentration changes of various analyte types in chemical and/or biological samples, including nucleic acid hybridization and/or sequencing reactions.