The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Aug. 12, 2014
Lg Siltron Incorporated, Gumi-si, Gyeongsangbuk-do, KR;
Kyu Hyung Lee, Gumi-si, KR;
LG SILTRON INCORPORATED, Seoul, KR;
Abstract
The method of an embodiment includes the steps of: obtaining a first rocking curve with respect to a wafer obtained using an X-ray diffraction device; setting an X-ray incident angle range having a higher intensity than a reference level in the first rocking curve, calculating an inter-plane spacing for the set X-ray incident angle, calculating a strain value of the wafer using the calculated inter-plane spacing, and calculating sampled strain values on the basis of the calculated strain value; modeling a thickness according to the degree of damage of the wafer on the basis of the intensities of X-ray diffraction beams corresponding to the sampled strain values; obtaining a second rocking curve on the basis of the set X-ray incident angle range, the calculated inter-plane spacing, the sampled strain values and the modeled thickness; matching the second rocking curve to the first rocking curve by changing at least one of the X-ray incident angle range, the inter-plane spacing, the sampled strain values and the modeled thickness; and calculating the depth of damage of the wafer on the basis of the matching result.