The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Dec. 28, 2016
Industrial Technology Research Institute, Hsinchu, TW;
Fu-Cheng Yang, Hsinchu, TW;
Chia-Liang Yeh, Hsinchu, TW;
Wei-Hsiung Tsai, Hsinchu, TW;
Keng-Li Lin, Hsinchu, TW;
Yeou-Sung Lin, Hsinchu, TW;
Mao-Sheng Huang, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A device and method for detecting crystal quality of a low temperature poly-silicon (LTPS) backplane are provided, the method including: projecting narrowband light to the LTPS backplane; performing image capturing of each position on a surface of the LTPS backplane at a first angle in a first axial direction to obtain a first diffraction image, the first angle being an angle of maximum diffraction light intensity in the first axial direction; performing another image capturing of each position on the surface of the LTPS backplane at a second angle in a second axial direction to obtain a second diffraction image, the second angle being an angle of maximum diffraction light intensity in the second axial direction; and determining the crystal quality of the LTPS backplane based on a diffraction light intensity distribution obtained from the first and second diffraction images.