The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Jul. 08, 2015
Applicant:

Aledia, Grenoble, FR;

Inventors:

Frédéric Mercier, Saint Nicolas de Macherin, FR;

Erwan Dornel, Fontaine, FR;

Xavier Hugon, Teche, FR;

Assignee:

Aledia, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 33/08 (2006.01); H01L 27/15 (2006.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H05B 33/083 (2013.01); H01L 27/156 (2013.01); H01L 33/483 (2013.01); H01L 33/62 (2013.01); H05B 33/0815 (2013.01);
Abstract

An optoelectronic circuit for receiving a variable voltage having alternating increasing and decreasing phases. The optoelectronic circuit includes an alternating arrangement of resistive elements and light-emitting diode sets mounted in series. Each set contains two terminals. Each resistive element is inserted between two consecutive sets. The optoelectronic circuit includes, for each set among a plurality of said sets, a depletion mode metal oxide semiconductor field effect transistor, the drain and the source of which are coupled with the terminals of said set and the gate of which is coupled with one of the terminals of the next set. An additional resistive element is, for at least some of the transistors, coupled between the drain or the source of the transistor and one of the terminals of the set.


Find Patent Forward Citations

Loading…