The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Oct. 25, 2013
New Imaging Technologies, Verrieres le Buisson, FR;
Yang Ni, Palaiseau, FR;
NEW IMAGING TECHNOLOGIES, Verrieres le Buisson, FR;
Abstract
The invention concerns a structure of a CMOS active pixel, comprising a semi-conductive substrate () of a first type, at least one first photodiode operating in photovoltaic mode comprising a photovoltaic conversion area () defined by a doped area of a second type forming a PN junction with the substrate, said first photodiode re-emitting photoelectric charge carriers collected by the PN junction during the exposure of said first photodiode to a light, at least one second photodiode operating in integration mode and reverse-biased, said second photodiode comprising a charge accumulation area () defined by a doped area of the second type forming a PN junction with the substrate, said charge accumulation area being exposed to the charge carriers from the photovoltaic conversion area () in order to accumulate such charge carriers.