The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Nov. 17, 2016
The Regents of the University of California, Oakland, CA (US);
Clark T.-C. Nguyen, Oakland, CA (US);
Tristan O. Rocheleau, Berkeley, CA (US);
Thura Lin Naing, Berkeley, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
A radio frequency (RF) MEMS resonator is embedded in an active positive feedback loop to form a tunable RF channel-selecting radio transceiver employing a super-regenerative reception scheme. This transceiver harnesses the exceptionally high Q (around 100,000) and voltage-controlled frequency tuning of a resonator structure to enable selection of any one of among twenty 1 kHz wide RF channels over an 80 kHz range, while rejecting adjacent channels and consuming <490 μW. Such transceivers are well suited to wireless sensor node applications, where low-power and simplicity trump transmission rate. Electrical stiffness-based frequency tuning also allows this same device to operate as a frequency shift keyed (FSK) transmitter, making a complete transceiver in one simple device. Finally, the geometric flexibility of resonator structure design should permit a large range of usable RF frequencies, from the presently demonstrated 60.6-MHz VHF, all the way up to UHF.