The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Mar. 29, 2016
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Kouichi Kanda, Chofu, JP;

Shoichi Masui, Sagamihara, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/12 (2006.01); H04B 1/04 (2006.01); H03F 3/16 (2006.01); H04W 52/04 (2009.01); H03F 1/56 (2006.01); H03F 3/193 (2006.01); H03F 3/24 (2006.01); H03G 1/00 (2006.01); H03G 3/30 (2006.01); H01P 1/22 (2006.01);
U.S. Cl.
CPC ...
H03F 1/12 (2013.01); H03F 1/56 (2013.01); H03F 3/16 (2013.01); H03F 3/193 (2013.01); H03F 3/245 (2013.01); H03G 1/0088 (2013.01); H03G 3/3042 (2013.01); H04B 1/0458 (2013.01); H04W 52/04 (2013.01); H01P 1/22 (2013.01); H03F 2200/211 (2013.01); H03F 2200/423 (2013.01);
Abstract

A semiconductor integrated circuit includes a first transmission power mode configured to transmit by a first power, and a second transmission power mode configured to transmit by a second power smaller than the first power, the semiconductor integrated circuit. The semiconductor integrated circuit includes a first transistor configured to receive and amplify a transmission signal in the second transmission power mode, and an attenuator including a resistor element and a switching element, provided between an output of the first transistor and an output terminal, configured to control attenuation of an output signal of the first transistor.


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