The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Nov. 17, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Anthony J. Annunziata, Stamford, CT (US);

Gen P. Lauer, Yorktown Heights, NY (US);

Nathan P. Marchack, White Plains, NY (US);

Stephen M. Rossnagel, Pleasantville, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01);
Abstract

A method of making a magnetic random access memory (MRAM) device includes forming a magnetic tunnel junction (MTJ) on an electrode, the MTJ including a reference layer positioned in contact with the electrode, a free layer, and a tunnel barrier layer arranged between the reference layer and the free layer; and depositing an encapsulating layer on and along sidewalls of the MTJ by physical sputtering or ablation of a target material onto the MTJ.


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