The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Aug. 19, 2015
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Petrus Sundgren, Regensburg, DE;

Elmar Baur, Regensburg, DE;

Martin Hohenadler, Regensburg, DE;

Clemens Hofmann, Neutraubling, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 33/14 (2010.01); H01L 33/60 (2010.01); H01L 33/48 (2010.01); H01L 33/30 (2010.01); H01L 31/112 (2006.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 31/112 (2013.01); H01L 33/02 (2013.01); H01L 33/30 (2013.01); H01L 33/305 (2013.01); H01L 33/382 (2013.01); H01L 33/40 (2013.01); H01L 33/486 (2013.01); H01L 33/60 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlGaAs layers with 0.5<x≦1.


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