The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Jun. 07, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seth Coe-Sullivan, Redondo Beach, CA (US);

Marshall Cox, Brooklyn, NY (US);

Caroline J. Roush, Somerville, MA (US);

Jonathan S. Steckel, Cupertino, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); C09K 11/02 (2006.01); C09K 11/56 (2006.01); C09K 11/88 (2006.01); H01L 51/50 (2006.01); H05B 33/14 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/28 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); C09K 11/02 (2013.01); C09K 11/565 (2013.01); C09K 11/883 (2013.01); H01L 27/156 (2013.01); H01L 33/0029 (2013.01); H01L 33/28 (2013.01); H01L 51/502 (2013.01); H01L 51/5012 (2013.01); H05B 33/145 (2013.01);
Abstract

Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm. Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals.


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