The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Jun. 04, 2015
El-seed Corporation, Nagoya-shi, JP;
Tsukasa Kitano, Nagoya, JP;
Koichi Naniwae, Nagoya, JP;
EL-SEED CORPORATION, Nagoya-Shi, Aichi, JP;
Abstract
A light emitting element manufacturing method of allowing a semiconductor laminated part which includes a light emitting layer and includes a group-III nitride semiconductor to grow on a substrate surface in which protrusions are formed in a period which is larger than an optical wavelength of light emitted from the light emitting layer and is smaller than a coherent length of the light, includes: forming a buffer layer along the substrate surface having the protrusions; allowing crystal nuclei which have facet surfaces and are separated from each other to grow on the buffer layer such that the crystal nuclei include at least one protrusion; and allowing a planarization layer to grow on the buffer layer in which the crystal nuclei are formed.