The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Aug. 25, 2014
Seoul Viosys Co., Ltd., Ansan-si, KR;
Mitsubishi Chemical Corporation, Chiyoda-ku, JP;
Seung Kyu Choi, Ansan-si, KR;
Chae Hon Kim, Ansan-si, KR;
Jung Whan Jung, Ansan-si, KR;
Ki Bum Nam, Ansan-si, KR;
Kenji Shimoyama, Ushiku, JP;
Kaori Kurihara, Ushiku, JP;
SEOUL VIOSYS CO., LTD., Ansan-si, KR;
Abstract
Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.