The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Mar. 19, 2010
Applicant:
Kunihiro Shiota, Kanagawa, JP;
Inventor:
Kunihiro Shiota, Kanagawa, JP;
Assignee:
NLT TECHNOLOGIES, LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); G02F 1/1368 (2006.01); H01L 29/786 (2006.01); G02F 1/1345 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); G02F 1/1368 (2013.01); H01L 29/66757 (2013.01); H01L 29/78609 (2013.01); H01L 29/78675 (2013.01); G02F 1/13454 (2013.01); G02F 2202/104 (2013.01);
Abstract
A thin film transistor (TFT) is provided which is capable of reducing leakage currents in a polycrystalline silicon TFT without causing an increase in manufacturing processes. Source/drain regions of an activated layer of the TFT to be formed in a circuit region and pixel region formed on a glass substrate of a liquid crystal display panel for a mobile phone is formed so that its boron impurity falls within a range of 2.5×10/cmto 5.5×10/cmand its impurity activation falls within a range of 1% to 7%.