The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Feb. 10, 2015
Applicants:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Denso Corporation, Kariya-shi, Aichi-ken, JP;

Inventors:

Hidefumi Takaya, Toyota, JP;

Jun Saito, Toyota, JP;

Akitaka Soeno, Toyota, JP;

Toshimasa Yamamoto, Ichinomiya, JP;

Narumasa Soejima, Nagakute, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 21/761 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 21/761 (2013.01); H01L 29/06 (2013.01); H01L 29/0623 (2013.01); H01L 29/0661 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/12 (2013.01); H01L 29/408 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01);
Abstract

A semiconductor device provided herein includes: a fourth region of a p-type being in contact with a lower end of the gate trench; a termination trench provided in the front surface in a range outside the second region; a lower end p-type region of the p-type being in contact with a lower end of the termination trench; a lateral p-type region of the p-type being in contact with a lateral surface of the termination trench on an outer circumferential side, connected to the lower end p-type region, and exposed on the front surface; and a plurality of guard ring regions provided on the outer circumferential side with respect to the lateral p-type region and exposed on the front surface.


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