The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Oct. 03, 2016
Applicant:

Lapis Semiconductor Co., Ltd., Kanagawa, JP;

Inventor:

Hiroki Kasai, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01); H01L 23/535 (2006.01); H01L 21/74 (2006.01); H01L 23/48 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14658 (2013.01); H01L 21/743 (2013.01); H01L 23/481 (2013.01); H01L 23/535 (2013.01); H01L 27/1203 (2013.01); H01L 27/1463 (2013.01); H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14689 (2013.01); H01L 31/02005 (2013.01); H01L 27/14676 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a first semiconductor layer; an insulation member layer formed on the first semiconductor layer; a transistor disposed in an upper portion of the insulation member layer; a first interlayer insulation film covering the transistor; a layered member including a wiring layer formed on the first interlayer insulation film and a second interlayer insulation film; and a first penetrating electrode penetrating through the insulation member layer, the first interlayer insulation film, and the layered member. The first penetrating electrode is electrically connected only to the first semiconductor layer.


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