The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Apr. 16, 2014
Max-planck-gesellschaft Zur Foerderung Der Wissenschaften E. V., Munich, DE;
Razmik Mirzoyan, Unterschleissheim, DE;
Masahiro Teshima, Unterschleissheim, DE;
Elena Popova, Moscow, RU;
Abstract
The silicon-based photomultiplier device comprises a substrate (), a first layer () of a first conductivity type, a second layer () of a second conductivity type formed on the first layer, wherein the first layer () and the second layer () form a p-n junction, wherein the first layer () and the second layer () are disposed on or above the substrate (). A material layer () between the substrate () and the first layer () fulfills the function of a light absorber, thereby efficiently suppressing crosstalk between adjacent cells of the device. Material layer () may further serve as an electrode for readout of electrical signals from the device.