The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Aug. 22, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Keisuke Kikutani, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 23/528 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/5283 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01);
Abstract

According to an embodiment, a semiconductor memory device includes a substrate, at least one stacked body, and a first insulating film. The stacked body includes a first end portion positioned at an end in at least one of a first direction and a second direction that crosses the first direction along a surface of the substrate, the plurality of electrode layers being formed into stairs in the first end portion, each of the plurality of electrode layers having a step in the first end portion. The first insulating film is provided on the substrate and includes first and second surfaces, the first and second surfaces surrounding the first end portion, the first surface being crossing a direction that the steps are formed, the second surface being positioned along the direction that the steps are formed.


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