The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Aug. 02, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Ki Jeong Kim, Hwaseong-si, KR;
O Ik Kwon, Yongin-si, KR;
Jong Kyoung Park, Suwon-si, KR;
Su Jee Sunwoo, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A memory device includes a plurality of gate electrode layers, an interlayer insulating layer, a plurality of contact plugs, and at least one contact insulating layer. The gate electrode layers extend in a first direction and have different lengths to form a step structure. The interlayer insulating layer is on the gate electrode layers. The contact plugs are connected to the gate electrode layers through the interlayer insulating layer. The at least one contact insulating layer is within the interlayer insulating layer and surrounds one or more of the contact plugs. The at least one contact insulating layer extends in the first direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile