The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Nov. 28, 2016
Globalfoundries Inc., Grand Cayman, KY;
Jason Eugene Stephens, Menands, NY (US);
Guillaume Bouche, Albany, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method including providing a semiconductor structure having a dielectric stack, hardmask stack, and mandrel layer disposed thereon. An array of mandrels is patterned into the mandrel layer. Mandrel spacers are formed self-aligned on sidewalls of the mandrels. A gapfill layer is disposed and planarized over the semiconductor structure. Non-mandrel pillars are formed over the planarized gapfill layer. Exposed portions of the gapfill layer are etched to form non-mandrel plugs preserved by the pillars. The pillars are removed to form a pattern, the pattern including the non-mandrel plugs. The pattern is utilized to form an array of alternating mandrel and non-mandrel metal interconnection lines in the dielectric stack. The array includes non-mandrel dielectric structures formed from the non-mandrel plugs.