The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Oct. 15, 2016
Matin Amani, Berkeley, CA (US);
Der-hsien Lien, Berkeley, CA (US);
Daisuke Kiriya, Berkeley, CA (US);
James Bullock, Tarcutta, AU;
Ali Javey, Lafayette, CA (US);
Matin Amani, Berkeley, CA (US);
Der-Hsien Lien, Berkeley, CA (US);
Daisuke Kiriya, Berkeley, CA (US);
James Bullock, Tarcutta, AU;
Ali Javey, Lafayette, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoSis reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoSmonolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.