The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Mar. 13, 2017
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventors:
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3245 (2013.01); H01L 21/26546 (2013.01); H01L 29/2003 (2013.01); H01L 29/7813 (2013.01); H01L 29/872 (2013.01);
Abstract
A technique of reducing the manufacturing cost of a semiconductor device is provided, There is provided a method of manufacturing a semiconductor device comprising an ion implantation process of implanting at least one of magnesium and beryllium by ion implantation into a first semiconductor layer that is mainly formed from a group III nitride; and a heating process of heating the first semiconductor layer in an atmosphere that includes an anneal gas of at least one of magnesium and beryllium, after the ion implantation process.