The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Aug. 20, 2015
Kabushiki Kaisha Toshiba, Tokyo, JP;
Kazuo Saki, Kanazawa Ishikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor layer, a first electrode located over the semiconductor layer and connected to the semiconductor layer, a second electrode spaced from the first electrode and located over the semiconductor layer and connected to the semiconductor layer, an insulation film located over the semiconductor layer, and a third electrode interposed between the first electrode and the second electrode, and location over a portion of the insulation film. The insulation film includes a first layer located on the semiconductor layer and between the first electrode and the second electrode and comprising silicon nitride, and a second layer located on the first layer and between the first electrode and the third electrode as well as between the second electrode and the third electrode, and comprising silicon nitride and an amount of oxygen larger than the first layer.