The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Apr. 16, 2015
Applicants:

Svetozar Popovic, Norfolk, VA (US);

Janardan Upadhyay, Norfolk, VA (US);

Leposava Vuskovic, Norfolk, VA (US);

H. Lawrence Phillips, Hayes, VA (US);

Anne-marie Valente-feliciano, Newport News, VA (US);

Inventors:

Svetozar Popovic, Norfolk, VA (US);

Janardan Upadhyay, Norfolk, VA (US);

Leposava Vuskovic, Norfolk, VA (US);

H. Lawrence Phillips, Hayes, VA (US);

Anne-Marie Valente-Feliciano, Newport News, VA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32192 (2013.01); H01J 37/32082 (2013.01); H01J 37/32394 (2013.01); H01J 37/32403 (2013.01); H01J 37/32449 (2013.01); H01J 37/32467 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01J 37/32596 (2013.01); H01J 37/32816 (2013.01); H01J 2237/334 (2013.01);
Abstract

A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.


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