The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Mar. 01, 2017
Applicant:
Elenion Technologies, Llc, New York, NY (US);
Inventors:
Yang Liu, Elmhurst, NY (US);
Yangjin Ma, Brooklyn, NY (US);
Ruizhi Shi, New York, NY (US);
Michael J. Hochberg, New York, NY (US);
Yi Zhang, Elkton, DE;
Shuyu Yang, Newark, DE (US);
Thomas Wetteland Baehr-Jones, Arcadia, CA (US);
Assignee:
Elenion Technologies, LLC, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/26 (2006.01); G02B 6/125 (2006.01); G02B 6/28 (2006.01); G02B 6/10 (2006.01); G02B 27/00 (2006.01); G06F 17/50 (2006.01); G06N 3/12 (2006.01); G02B 6/122 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/125 (2013.01); G02B 6/107 (2013.01); G02B 6/1228 (2013.01); G02B 6/2808 (2013.01); G02B 27/0012 (2013.01); G06F 17/5009 (2013.01); G06F 17/5018 (2013.01); G06F 17/5077 (2013.01); G06N 3/126 (2013.01); G02B 6/1223 (2013.01); G02B 2006/1215 (2013.01); G02B 2006/12038 (2013.01); G02B 2006/12061 (2013.01);
Abstract
A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 μm×2 μm, orders of magnitude smaller than MMI and directional couplers.