The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Jul. 10, 2015
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
John Paul McCarten, Penfield, NY (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
A method of clocking an image sensor which eliminates well bounce effects caused by global current flow in large image sensors during frame readout and line transfer is described. During charge transfer operations in which voltages are applied to VCCD gate contacts that are adjacent to the photodiodes, a compensating voltage may be applied to the lightshield that is associated with, and at least partially formed over the photodiode. Depending on polarity, the compensating lightshield pulse allows holes to locally flow from under the VCCD gates to the photodiode P+ pinning region or vice-versa, and in such a manner to eliminate the global flow of hole current. Lightshields may also be biased during electronic shuttering operations.