The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9847482 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 19, 2017

Filed:

Apr. 29, 2014
Applicant:

Hewlett Packard Enterprise Development Lp, Houston, TX (US);

Inventor:

Hans S. Cho, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1683 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); H01L 45/1633 (2013.01); H01L 45/1658 (2013.01); H01L 45/1675 (2013.01);
Abstract

A resistive memory device includes a bottom electrode and a top electrode crossing the bottom electrode at a non-zero angle. A switching region operatively contacts the bottom electrode and the top electrode. The switching region defines a current path between the bottom electrode and the top electrode in an ON state. An oxygen-supplying layer operatively contacts a portion of the switching region. The oxygen-supplying layer is positioned orthogonally to the current path and to the switching region.


Find Patent Forward Citations

Cho, Hans. (2017). Resistive memory devices with an oxygen-supplying layer (U.S. Patent No. 9847482). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9847482

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