The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Feb. 14, 2017
Applicants:
International Business Machines Corporation, Armonk, NY (US);
Crocus Technology, Santa Clara, CA (US);
Inventors:
Anthony J. Annunziata, Stamford, CT (US);
Erwan Gapihan, White Plains, NY (US);
Assignees:
International Business Machines Corporation, Armonk, NY (US);
Crocus Technology, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract
A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.