The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Aug. 05, 2015
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Kenji Fujimoto, Kanazawa Ishikawa, JP;
Takanobu Kamakura, Kitakyushu Fukuoka, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 25/16 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 25/167 (2013.01); H01L 33/30 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor light-emitting element includes a semiconductor stacked body that includes a light emitting layer in which n well layers (where n is, for example, an integer of 1 to 10) formed of In(GaAl)As (0<X≦0.2, 0<y<1), and (n+1) barrier layers formed of GaAlAs (0<z<1) and are alternately stacked with the well layer. The light emitting layer in some embodiments can emit light having a peak wavelength in a range of from 700 nm or more to 870 nm or less.