The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2017

Filed:

Jul. 07, 2016
Applicant:

Newsouth Innovations Pty Limited, UNSW Sydney, NSW, AU;

Inventors:

Stuart Ross Wenham, Cronulla, AU;

Phillip George Hamer, Kensington, AU;

Brett Jason Hallam, Bexley, AU;

Adeline Sugianto, Malabar, AU;

Catherine Emily Chan, Randwick, AU;

Lihui Song, Randwick, AU;

Pei Hsuan Lu, Rockdale, AU;

Alison Maree Wenham, Cronulla, AU;

Ly Mai, Sefton, AU;

Chee Mun Chong, Bellevue Hill, AU;

GuangQi Xu, Randwick, AU;

Matthew Edwards, Elanora Heights, AU;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 21/30 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1868 (2013.01); H01L 21/3003 (2013.01); H01L 21/67109 (2013.01); H01L 21/67115 (2013.01); H01L 21/67706 (2013.01); H01L 31/1804 (2013.01); H01L 31/186 (2013.01); H01L 31/1864 (2013.01); Y02B 10/10 (2013.01); Y02E 10/50 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises:


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