The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Oct. 12, 2012
Applicant:
Epigan NV, Hasselt, BE;
Inventors:
Joff Derluyn, Sint-Joris-Weert, BE;
Stefan Degroote, Scherpenheuvel-Zichem, BE;
Marianne Germain, Liege, BE;
Assignee:
EpiGaN nv, Hasselt, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); H01L 21/3213 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/0217 (2013.01); H01L 21/283 (2013.01); H01L 21/32133 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/517 (2013.01); H01L 29/66462 (2013.01);
Abstract
A device comprising a III-N layer stack featuring a two-dimensional electron gas is disclosed, comprising: —a III-N layer; —a AI-III-N layer on top of the III-N layer; —a passivation layer on top of said AI-III-N layer, the passivation layer comprising Silicon Nitride (SiN); wherein said passivation layer comprises a fully crystalline sub layer at the AI-III-N interface and at least part of the fully crystalline sub layer comprises Al and/or B; and associated methods for manufacturing the device.