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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9847412 B1

PDFFull Text
Date of Patent:
Dec. 19, 2017

Filed:

Oct. 12, 2012

Device comprising a iii-n layer stack with improved passivation layer and associated manufacturing method

Applicant:

Epigan NV, Hasselt, BE;

Inventors:

Joff Derluyn, Sint-Joris-Weert, BE;

Stefan Degroote, Scherpenheuvel-Zichem, BE;

Marianne Germain, Liege, BE;

Assignee:

EpiGaN nv, Hasselt, BE;

Attorney:

McDonnell Boehnen Hulbert & Berghoff LLP

Primary Examiner:

Hsin-Yi Hsieh

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); H01L 21/3213 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/0217 (2013.01); H01L 21/283 (2013.01); H01L 21/32133 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/517 (2013.01); H01L 29/66462 (2013.01);
Abstract

A device comprising a III-N layer stack featuring a two-dimensional electron gas is disclosed, comprising: —a III-N layer; —a AI-III-N layer on top of the III-N layer; —a passivation layer on top of said AI-III-N layer, the passivation layer comprising Silicon Nitride (SiN); wherein said passivation layer comprises a fully crystalline sub layer at the AI-III-N interface and at least part of the fully crystalline sub layer comprises Al and/or B; and associated methods for manufacturing the device.

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Derluyn, Joff. (2017). Device comprising a iii-n layer stack with improved passivation layer and associated manufacturing method (U.S. Patent No. 9847412). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9847412

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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