The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Apr. 08, 2015
Su Zhou Oriental Semiconductor Co., Ltd., Jiangsu, CN;
SU ZHOU ORIENTAL SEMICONDUCTOR CO., LTD., Jiangsu, CN;
Abstract
The present invention relates to a semiconductor photosensitive unit and a semiconductor photosensitive unit array thereof, including a floating gate transistor, a gating MOS transistor and a photodiode that are disposed on a semiconductor substrate. An anode or a cathode of the photodiode is connected to a floating gate of the floating gate transistor through the gating MOS transistor, and the corresponding cathode or anode of the photodiode is connected to a drain of the floating gate transistor or connected to an external electrode. After the gating MOS transistor is switched on, the floating gate is charged or discharged through the photodiode; and after the gating MOS transistor is switched off, charges are stored in the floating gate of the floating gate transistor. Advantages like a small unit area, low surface noise, long charge storage time of the floating gate, and large dynamic range of an operating voltage are achieved.