The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Mar. 30, 2016
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Yucheng Chan, Beijing, CN;
Chienhung Liu, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/8234 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1248 (2013.01); H01L 21/02183 (2013.01); H01L 21/02244 (2013.01); H01L 27/1259 (2013.01); H01L 29/42384 (2013.01); H01L 29/66742 (2013.01); H01L 29/66757 (2013.01); H01L 29/786 (2013.01); H01L 29/78606 (2013.01);
Abstract
The present invention belongs to the field of display technology and provides a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a gate, a source, a drain and a plurality of insulating layers, wherein at least one insulating layer comprises a Group VB metal oxide. Since the insulting layer is formed by using the Group VB metal oxide which has high dielectric constant, the thickness of the insulating layer can be reduced and the thin film transistor can be miniaturized.