The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Jul. 15, 2016
Applicant:
Chip Solutions, Llc, Phoenix, AZ (US);
Inventor:
Sukianto Rusli, Phoenix, AZ (US);
Assignee:
CHIP SOLUTIONS, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 21/486 (2013.01); H01L 21/4846 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 23/3107 (2013.01); H01L 23/3121 (2013.01); H01L 23/49838 (2013.01); H01L 23/49894 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 24/82 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/0801 (2013.01); H01L 2224/08501 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/81455 (2013.01); H01L 2224/821 (2013.01); H01L 2224/82896 (2013.01); H01L 2924/15747 (2013.01);
Abstract
Disclosed herein is a semiconductor device that includes a semiconductor die and a substrate including a first surface and a second surface. The substrate includes a conductive circuit and an insulative material over the conductive circuit. The semiconductor die is attached to the second surface. The semiconductor device further includes an interconnect joint structure in the substrate creating a capture pad including a middle copper layer, an adjacent top nickel layer, and an adjacent bottom nickel layer. A method for making a semiconductor device is further disclosed.